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Consider the following statements regarding n-channel JFET: 1. The maximum drain current IDSS occurs when gate-to-source voltage VGS = 0 V and drain-to-source voltage VDS ≥ |VP|. (VP is pinch-off voltage). 2. For gate-to-source voltage VGS less than the pinch-off level, the drain current is 0 A. 3. For all levels of VGS between 0 V and the pinch-off level, the current ID will range between IDSS and 0 A, respectively. which of the above statements are correct ?
When drain voltage equals the pinch-off-voltage, then drain current ___________ with the increase in drain voltage
Consider the following statements regarding JFET: 1. The relationship between the drain current and gate-to-source voltage of a JFET is a nonlinear. 2. The minimum current for JFET occurs at pinch-off voltage defined by VGS = VP. 3. A current controlled device is one in which a current defines the operating conditions of the device. Which of the above statements are correct?
Consider the following statements: 1. The voltage developed across the OFF switches of the half-bridge converter is the maximum dc-link voltage. 2. In the full-bridge converter, the voltage across the primary of the transformer is the dc link voltage. 3. The voltage developed across the OFF switches of the full-bridge converter is half the maximum dc-link voltage. Which of the above statements are correct?
When an electric current coil of a wattmeter is connected to the electric current path R and the voltage coil is connected between the electric current R path and the neutral side of the balanced three phase supply, it shows 10 kW. The line voltage along the phase sequence RYB is 400 V. The current drawn by the current path is 54 A. What is the new reading of the wattmeter if the voltage coil is connected between the lines B and the Y paths, even if the electric current coil is continuously present in the line R?
Various measurements are made on an NMOS amplifier for which the drain resistor RD is 20 kΩ. First, DC measurements show the voltage across the drain resistor, VRD, to be 2 V and the gate-to-source bias voltage to be 1.2 V. Then, ac measurements with small signals show the voltage gain to be −10 V/V. What is the value of Vt for this transistor?
An NMOS transistor is operating at the edge of saturation with an overdrive voltage VOV and a drain current ID. If is VOV is doubled, and we must maintain operation at the edge of saturation, what value of drain current results?
Which of the following statements are correct for an ideal constant voltage source? 1. Its output voltage remains absolutely constant whatever the change in load current. 2. It possesses zero internal resistance so that internal voltage drop in the source is zero. 3. Output voltage is provided by the source would remain constant irrespective of the amount of current drawn from it. 4. Output voltage provided by the source varies with the amount of current drawn from it.
Last year, there were three sections in a competitive exam. Out of them 33 students cleared the cut-off in Section A, 34 students cleared the cut-off in Section B and 32 students cleared the cut-off in Section C. 10 students cleared the cut-off in section A and section B, 9 cleared the cut-off in section B and section C and 8 cleared the cut-off in section A and section C. The number of students who cleared only one section was equal and was 21 for each section. How many students cleared all the three sections?
Various measurements are made on an NMOS amplifier for which the drain resistor RD is 20 kΩ. First, DC measurements show the voltage across the drain resistor, VRD, to be 2 V and the gate-to-source bias voltage to be 1.2 V. Then, ac measurements with small signals show the voltage gain to be −10 V/V. If the process transconductance parameter is 50μA/V2, what is the MOSFET’s W/L?