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Consider the following statements about IGBT 1. It has high input impedance 2. It has low ON state voltage drop 3. Its switching speed is higher than that of the MOSFET 4. It is a voltage controlled device Which of the above statements are correct?

Consider the following statements about IGBT 1. It has high input impedance 2. It has low ON state voltage drop 3. Its switching speed is higher than that of the MOSFET 4. It is a voltage controlled device Which of the above statements are correct? Correct Answer 1, 2 and 4 only

BJT

MOSFET

IGBT

Bipolar device

Unipolar device

Bipolar device, Three terminal device (emitter collector and gate)

Low input impedance

High input impedance

High input impedance

Current controlled device

Voltage controlled device

Voltage controlled device

Low on-state voltage drop and low conduction loss

High on-state voltage drop and higher conduction loss

Low forward voltage drop, low ON state power loss than MOSFET, low conduction loss than MOSFET

Secondary breakdown occurs

Free from the secondary breakdown

Secondary breakdown does not occur

Negative temperature coefficient

Positive temperature coefficient

Positive temperature coefficient

Not advisable for parallel operation

advisable for parallel operation

Used for parallel operation

Lower operating frequency(10kHz)

higher operating frequency(100kHz)

 

On state in the saturation region

On state in the ohmic region

 

Controlled turn on and turn off device

Control turn on and turn off device

Controlled turn on and turn off device

Turn on and turn off time depend on junction capacitance

Smaller turn off time

 

Controlled signal requirement continuously

Controlled signal requirement continuously

Controlled signal requirement continuously

Related Questions

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