The Common Emitter Configuration MCQ

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• The range of β is _________
  ক

  20 to 500

  খ

  50 to 300

  গ

  30 to 400

  ঘ

  10 to 20
• When the signal is applied, the ratio of change of collector current to the ratio of change of base current is called_________
  ক

  dc current gain

  খ

  base current amplification factor

  গ

  emitter current amplification factor

  ঘ

  ac current gain
• In ICEO, wt does the subscript ‘CEO’ mean?
  ক

  collector to base emitter open

  খ

  emitter to base collector open

  গ

  collector to emitter base open

  ঘ

  emitter to collector base open
• The relation between α and β is_________
  ক

  β = α/ (1-α)

  খ

  α = β/(1+β)

  গ

  β = α/ (1+α)

  ঘ

  α = β/(1- β)
• The collector supply voltage for a CE configured transistor is 10V. The resistance RL=800Ω. The voltage drop across RL is 0.8V. Find the value of collector emitter voltage.
  ক

  3.7V

  খ

  9.2V

  গ

  6.5V

  ঘ

  9.8V
• A transistor is connected in CE configuration. Collector supply voltage Vcc=10V, RL=800Ω, voltage drop across RL=0.8V, α=0.96. What is base current?
  ক

  41.97µA

  খ

  56.78µA

  গ

  67.67µA

  ঘ

  78.54µA
• In CE configuration, if the voltage drop across 5kΩ resistor connected in the collector circuit is 5V. Find the value of IB when β=50.
  ক

  0.01mA

  খ

  0.25mA

  গ

  0.03mA

  ঘ

  0.02mA
• A germanium transistor with α=0.98 gives a reverse saturation current ICBO=10µA in a CB configuration. When it is used in CE configuration with a base current of 0.22µA, calculate the collector current.
  ক

  0.9867mA

  খ

  0.7654mA

  গ

  0.51078mA

  ঘ

  0.23456mA
• In an NPN silicon transistor, α=0.995, IE=10mA and leakage current ICBO=0.5µA. Determine ICEO.
  ক

  10µA

  খ

  100µA

  গ

  90µA

  ঘ

  500µA
• The base current amplification factor β is given by_________
  ক

  IC/IB

  খ

  IB/IC

  গ

  IE/IB

  ঘ

  IB/IE