What accounts for the flow of charge carriers in forward and reverse biasing of silicon p-n diode -
What accounts for the flow of charge carriers in forward and reverse biasing of silicon p-n diode - Correct Answer Drift in reverse bias and diffusion in forward bias
Concept:
- In a p-n junction, forward-biased majority charge carriers cross the junction to become minority carriers i.e. Minority carries injection takes place.
- Because of the huge concentration gradient at the edge of the junction of minority carriers, diffusion takes place which results in the flow of current across the junction.
A diode in forward-bias is as shown:
[ alt="F1 S.B Pallavi 09.11.2019 D 6" src="//storage.googleapis.com/tb-img/production/19/11/F1_S.B_Pallavi_09.11.2019_D%206.png" style="width: 288px; height: 204px;">
- When Reverse-biased, the flow of the majority varies is prevented because of a wide depletion region and high electric field opposing the flow. So, there is no diffusion current that could flow.
- The reverse bias opposes the majority carriers but makes the minority carriers to cross the p-n junction because of strong attraction by the Electric field.
The depletion width is clearly observed for a reverse-biased p-n junction as:
[ alt="F1 S.B Pallavi 09.11.2019 D 7" src="//storage.googleapis.com/tb-img/production/19/11/F1_S.B_Pallavi_09.11.2019_D%207.png" style="width: 307px; height: 193px;">
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