Under normal operating conditions, the gate terminals of an n-channel Junction Field Effect Transistor UFET) and an n-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) are

The Transfer characteristic of the different types of MOSFETs is shown below, where ID is drain current and VGS is the Gate-Source voltage, the correct combination of MOSFET w.r.t to transfer characteristics is: Types of MOSFET (P) P – Channel Enhancement MOSFET (Q) P – Channel Depletion MOSFET (R) N – Channel Enhancement MOSFET (S) N – Channel Depletion MOSFET

A

P – 4, Q – 2, R – 1, S – 3

B

P – 3, Q – 2, R – 4, S – 1

C

P – 1, Q – 3, R – 2, S – 4

D

P – 2, Q – 4, R – 3, S - 1

Which of the following conditions must be satisfied for a transistor to be in saturation? 1. Its collector to base junction should be under forward bias 2. Its collector to base junction should be under reverse bias 3. Its emitter to base junction should be under reverse bias 4. Its emitter to base junction should be under forward bias Which of the above conditions are correct?

A

1 and 3

B

2 and 3

C

2 and 4

D

1 and 4

Choose the correct statement(s) i) The gate circuit impedance of MOSFET is higher than that of a BJT ii) The gate circuit impedance of MOSFET is lower than that of a BJT iii) The MOSFET has higher switching losses than that of a BJT iv) The MOSFET has lower switching losses than that of a BJT

A

Both i & ii

B

Both ii & iv

C

Both i & iv

D

Only ii

The following item consists of two statements, one labeled as the 'Statement (I)' and the other as 'Statement (II)'. Examine these two statements carefully and select the answers to these items using the codes given below: Statement (I): MOSFET is a field-effect transistor whose drain current is controlled by the voltage applied at the gate. Statement (II): MOSFET is an insulated gate FET. Codes:

A

Both Statement (I) and Statement (II) are individually true and Statement (II) is the correct explanation of Statement (I)

B

Both Statement (I) and Statement (II) are individually true and Statement (II) is the correct explanation of Statement (I)

C

Both Statement (I) and Statement (II) are individually true but Statement (II) is NOT the correct explanation of Statement (I)

D

Both Statement (I) and Statement (II) are individually true but Statement (II) is NOT the correct explanation of Statement (I)

E

Statement (I) is true but Statement (II) is false

F

Statement (I) is true but Statement (II) is false

G

Statement (I) is false but Statement (II) is true

H

Statement (I) is false but Statement (II) is true

For transistor action (a) Base, emitter, and collector regions should have similar size and doping concentrations. (b) The base region must be very thin and lightly doped. (c) The emitter-base junction is forward biased and the base-collector junction is reverse biased. (d) Both the emitter-base junction as well as the base-collector junction are forward biased. Which one of the following pairs of statements is correct?

A

(d), (a)

B

(a), (b)

C

(b), (c)

D

(c), (d)

Consider the following statements for Poly-Si deposition: 1. Poly-Si layer is used for gate electrode of MOSFET because it has similar lattice constants with SiO2. 2. Poly-Si layer used for gate electrode of MOSFET for the better mechanical stability due to different thermal expansion coefficients. 3. In VLSI circuits, interconnects can be completed in one or two metal levels. 4. Poly-Si is used for short interconnects. Which of the above statements are correct ?

A

1 and 2 only

B

2 and 3 only

C

1 and 4 only

D

2, 3 and 4 only

A transistor is used in common emitter mode as an amplifier. Then a. The base-emitter junction is forward biased b. The base-emitter junction is reverse biased c. The input signal is connected in series with the voltage applied to the base-emitter junction d. The input signal is connected in series with the voltage applied to bias the base-collector junction Which of the following statement is true?

A

Only a

B

Both b and c

C

a, b and d

D

a and c

Assertion (A): A p-n junction diode with low junction depth can be used as a solar cell when illuminated by suitable light (wavelength) at the top thin layer above the junction. Reason (R): A p-n junction diode under no condition can be used as a solar cell. It can be used only as a light-emitting diode for optoelectronic applications.

A

Both (A) and (R) are true and (R) is the correct explanation of (A)

B

Both (A) and (R) are true, but (R) is not the correct explanation of (A)

C

(A) is true, but (R) is false

D

(A) is false, but (R) is true

Sourab hires a car at junction A and drives 16 km towards north. He takes a right turn and drives 30 km to reach a bus stand. He now drives 10 km after taking a left turn to reach a petrol bunk. Finally, he takes a left turn and drives 30 km, and stops at Junction B. How far is junction A with respect to junction B?

A

24 km

B

26 km

C

28 km

D

22 km

Which of the following are the characteristics of a Junction Field Effect Transistor? 1. High input resistance 2. Good thermal stability 3. High current gain 4. Noisier than bipolar junction transistor

A

1 and 3

B

1 and 2

C

2 and 3

D

3 and 4

Under normal operating conditions, the gate terminals of an n-channel Junction Field Effect Transistor UFET) and an n-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) are

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