The electrical conductivity of pure silicon at 300 K is 4.34 × 10-4 (Ωm)-1 and at 500 K, it is 2.15(ΩM)-1. Given that the Boltzman constant, R = 8.6 × 10-5 eV .K-1, the band energy gap is . . . . . . . . eV.
The electrical conductivity of pure silicon at 300 K is 4.34 × 10-4 (Ωm)-1 and at 500 K, it is 2.15(ΩM)-1. Given that the Boltzman constant, R = 8.6 × 10-5 eV .K-1, the band energy gap is . . . . . . . . eV. Correct Answer 1.1
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Feb 20, 2025