Related Questions

If biasing is not done in an amplifier circuit, it results in ___________
A Decrease in the base current
B Unfaithful amplification
C Excessive collector bias
D None of the above
The disadvantage of base resistor method of transistor biasing is that it ___________
A Is complicated
B Is sensitive to changes in ß
C Provides high stability
D None of the above
Transistor biasing represents ___________ conditions
A a.c.
B d.c.
C both a.c. and d.c.
D none of the above
Transistor biasing is generally provided by a ___________
A Biasing circuit
B Bias battery
C Diode
D None of the above
In the design of a biasing circuit, the value of collector load RC is determined by ___________
A VCE consideration
B VBE consideration
C IB consideration
D None of the above
For faithful amplification by a transistor circuit, the value of VBE should ___________ for a silicon transistor
A Be zero
B Be 0.01 V
C Not fall below 0.7 V
D Be between 0 V and 0.1 V
For faithful amplification by a transistor circuit, the value of VCE should ___________ for silicon transistor
A Not fall below 1 V
B Be zero
C Be 0.2 V
D None of the above
In a particular biasing circuit, the value of RE is about
A 10 kΩ
B 1 MO
C 100 kΩ
D 800 O
In a single stage transistor amplifier, RC and RL represent collector resistance and load resistance respectively. The transistor sees a d.c. load of ___________
A RC + RL
B RC || RL
C RL
D RC
The leakage current in a silicon transistor is about ___________ the leakage current in a germanium transistor
A One hundredth
B One tenth
C One thousandth
D One millionth

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