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Which of the following statements is/are correct? 1) Conductor contains a large number of electrons in the conduction band at room temperature. No energy gaps exist and the valence and conduction bands overlap. 2) A semiconductor is a material in which the energy gap is so large that practically no electron can be given enough energy to jump this gap. 3) An insulator is a solid with an energy gap small enough for electrons to cross rather easily from the valence band to conduction band.
At what condition, the rate of electron capture from the conduction band and the rate of the electron emission back into the conduction band must be equal?
Which of the following equations represent the correct expression for the band diagram of the p-n junction? (E1=difference between the fermi level of material and conduction band of n material and E2=difference between the conduction band of n material and fermi level of n material)
Is the following statement true? Statement: On the basis of band theory of solids the semi-conductors have a completely filled valence band, a partially filled conduction band and a narrow forbidden band.
The process of excitation of an electron from valence band to conduction band leaves an empty hole in the valence band and is called as ____________
Consider the following statements: The main contribution to photoconduction is by 1. the generation of electron and hole pair by a photon 2. a donor electron jumping into the conduction band because of a photon’s energy 3. a valence electron jumping into an acceptor state because of a photon’s energy Which of the above statements is/are correct?
Which of the following are the properties of an electron? 1) Electron is a constituent of cathode ray 2) Electron is a negatively charged particle 3) The mass of the electron is equal to the mass of the proton 4) Electron is deflected by the electric field but not by magnetic field Select the correct answer using the code given below:
The conduction band edge in the p material is not at the same level to that of conduction band edge in the n material. Is it true or false?
An N-type semiconductor having uniform doping is biased as shown in the figure. If EC is the lowest energy level of the conduction band, EV is the highest energy level of the valance band and EF is the Fermi level, which one of the following represents the energy band diagram for the biased N-type semiconductor?
The current due to electron flow in conduction band is the hole current in valence band.