High electron mobility transistors can be constructed with the use of single semiconductor material like GaAs that have high electron mobility.

High electron mobility transistors can be constructed with the use of single semiconductor material like GaAs that have high electron mobility. Correct Answer False

High electron mobility transistor is a hetero junction FET, meaning that it does not use a single semiconductor material, but instead is constructed with several layers of compound semiconductor materials.

Related Questions

Assertion (A): A high electron mobility transistor is based upon modulation-doped (GaAs - AlGaAs) single heterojunction structure. Reason (R): HEMT shows a very high noise figure and very low gain at very high microwave frequencies up to 70 GHz.