High electron mobility transistors can be constructed with the use of single semiconductor material like GaAs that have high electron mobility.
High electron mobility transistors can be constructed with the use of single semiconductor material like GaAs that have high electron mobility. Correct Answer False
High electron mobility transistor is a hetero junction FET, meaning that it does not use a single semiconductor material, but instead is constructed with several layers of compound semiconductor materials.
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Feb 20, 2025