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The junction resistance and capacitance of the intrinsic region in a PIN diode are connected______ in the equivalent circuit of PIN diode.

The junction resistance and capacitance of the intrinsic region in a PIN diode are connected______ in the equivalent circuit of PIN diode. Correct Answer Parallel

The junction capacitance Cj and junction resistance Rj of a PIN diode are connected in parallel in the equivalent circuit of a PIN diode. The package resistance and package capacitance are connected in series to these junction parameters.

Related Questions

1. The pin diode consists of two narrow, but highly doped, semiconductor regions separated by a thicker, lightly doped material called the intrinsic region. 2. Silicon is used most often for its power-handling capability and because it provides a highly resistive intrinsic region. 3. The pin diode acts as an ordinary diode at frequencies above 100 MHz. Which of the above statements are correct?
Assertion (A): A p-n junction diode with low junction depth can be used as a solar cell when illuminated by suitable light (wavelength) at the top thin layer above the junction. Reason (R): A p-n junction diode under no condition can be used as a solar cell. It can be used only as a light-emitting diode for optoelectronic applications.
For transistor action (a) Base, emitter, and collector regions should have similar size and doping concentrations. (b) The base region must be very thin and lightly doped. (c) The emitter-base junction is forward biased and the base-collector junction is reverse biased. (d) Both the emitter-base junction as well as the base-collector junction are forward biased. Which one of the following pairs of statements is correct?
Two capacitors having capacitance value 4F, three capacitors having capacitance value 2F and 5 capacitors having capacitance value 1F are connected in parallel, calculate the equivalent capacitance.
For a diode the transition capacitance was 15pF. The diode is replaced with another diode of same material with twice cross sectional area. Terminal voltage remains unchanged. The capacitance of new diode is __________
Sourab hires a car at junction A and drives 16 km towards north. He takes a right turn and drives 30 km to reach a bus stand. He now drives 10 km after taking a left turn to reach a petrol bunk. Finally, he takes a left turn and drives 30 km, and stops at Junction B. How far is junction A with respect to junction B?
Consider the following statements in the relevant context: 1. The two types of currents that flow in semiconductor diodes and transistors are drift and diffusion currents. 2. The junction region is called depletion region or space-charge region. 3. When currents flow through the diode in forward bias, the depletion region current is mostly of ‘diffusion’ type. Which of the above statements are correct?
Match List I with List II List I (Diffusion profile measurement technique) List II (Characteristics) A. Capacitance - voltage 1. Not suitable for diffusion studies in VLSI process when shallow junction profiles are of interest B. Differential - conductance 2. Needs Van dc graff generator C. Spreading resistance 3. Two–point probe arrangement D. RBS 4. Concentration near the junction space-charge region at zero bias cannot be measured Choose the correct answer from the options given below:
There is a numeric lock which has a 3-digit PIN. The PIN contains digits 1 to 7. There is no repetition of digits. The digits in the PIN from left to right are in decreasing order. Any two digits in the PIN differ by at least 2. How many maximum attempts does one need to find out the PIN with certainty?
Consider an abrupt PN junction. Let V0 be the built in potential of this junction and VR be the reverse bias voltage applied. If the junction capacitance Cj is 1pF for V0+VR =1V, then for V0+VR =4V what will be the value of Cj?