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Consider a MOS structure with equilibrium Fermi potential of the doped silicon substrate is given as 0.3eV. Electron affinity of Si is 4.15eV and metal is 4.1eV. Find the built in potential of the MOS system.

Consider a MOS structure with equilibrium Fermi potential of the doped silicon substrate is given as 0.3eV. Electron affinity of Si is 4.15eV and metal is 4.1eV. Find the built in potential of the MOS system. Correct Answer -0.9eV

Surface potential: qΦs = 4.15eV + 0.55eV + 0.3eV = 5.0eV qΦm-qΦs = 4.1eV – 5.0eV = -0.9eV.

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