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Plasma-enhanced chemical vapour deposition process is used for fabrication of

Plasma-enhanced chemical vapour deposition process is used for fabrication of Correct Answer conducting & insulating films

Plasma-enhanced chemical vapour deposition process is a chemical deposition technique used for the fabrication of both insulating and conducting films.

Related Questions

Consider the following statements and choose the correct answer:
1. A direct proportionality exists between vapour pressure and the concentration of water vapour in the atmosphere
2. Relative humidity is an expression of the ratio of the actual vapour pressure of the atmosphere when saturated at the same temperature
3. A rise or fall in temperature with no change in vapour pressure will cause a drop or rise, respectively, in relative humidity
4. A rise or fall in vapour pressure with no change in temperature will be accompanied by a rise or fall, respectively, in relative humidity
Consider the following statements regarding Epitaxial Growth: 1. Thin layers are grown on a substrate wafer, this technique is known as epitaxial growth. 2. Physical vapour deposition is also called vapour phase epitaxy. 3. OMCVD is a technique to grow epitaxial layers from metalorganic compounds. 4. High through out and slow deposition rate are the disadvantages of the CVD technique. which of the above statements are correct ?
Consider the following statements: 1. There is no change in temperature when a liquid is being evaporated into vapour 2. Vapour is a mixed phase of liquid and gas in the zone between saturated liquid line and saturated vapour line 3. The saturated dry vapour curve is steeper as compared to saturated liquid curve on a T-s diagram 4. The enthalpy of vaporization decreases with increase in pressure Which of the above statements are correct?
To grow the polysilicon gate layer, which of the following chemical is used for chemical vapour deposition?
In Plasma Enhanced Chemical Vapor Deposition, deposition occurs at a _______ temperature.
Which of the following is not involved in a CVD (Chemical Vapour deposition) process?
In the Chemical vapour deposition process, the preform is heated in the presence of hydrocarbon gas.
What is the temperature maintained in the furnace in the Chemical vapour deposition process?
Consider the following statements in respect of a vapour-absorption refrigeration cycle: 1. The absorption refrigeration cycle is generally used when waste heat is a available from an existing source or when free energy like solar energy is to be used. 2. There are no moving parts in the absorption refrigeration plant except a small liquid pump. 3 the value of the coefficient of performance is nearly the same in both vapour-absorption and vapour-compression refrigeration plants. Which of the above statements are correct?
Which of the following fabrication process is mainly responsible for the fabrication of very high pressure boilers and nuclear reactors?