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For transistor action (a) Base, emitter, and collector regions should have similar size and doping concentrations. (b) The base region must be very thin and lightly doped. (c) The emitter-base junction is forward biased and the base-collector junction is reverse biased. (d) Both the emitter-base junction as well as the base-collector junction are forward biased. Which one of the following pairs of statements is correct?
Consider the following statements regarding an N-P-N Bipolar Junction Transistor: 1. Emitter diode is forward biased and the collector diode is reverse biased 2. Emitter has many free electrons 3. Free electrons are injected into the base and pass through the collector 4. Depletion layers around junction J1 and J2 of BJT are widened. Which of the above statements are correct?
A diode had a transition capacitance of 1pF and depletion width of 1 µm. The capacitance changes to 10 pF when the depletion width changes. The final depletion width is __________
In a pnp-BJT, when the E-B junction is forward biased and no voltage is applied across C-B junction, what happens to the width of the depletion region in the E-B junction?
Consider the following statements in the relevant context: 1. The two types of currents that flow in semiconductor diodes and transistors are drift and diffusion currents. 2. The junction region is called depletion region or space-charge region. 3. When currents flow through the diode in forward bias, the depletion region current is mostly of ‘diffusion’ type. Which of the above statements are correct?
A transistor is used in common emitter mode as an amplifier. Then a. The base-emitter junction is forward biased b. The base-emitter junction is reverse biased  c. The input signal is connected in series with the voltage applied to the base-emitter junction  d. The input signal is connected in series with the voltage applied to bias the base-collector junction Which of the following statement is true?
Assertion (A): A p-n junction diode with low junction depth can be used as a solar cell when illuminated by suitable light (wavelength) at the top thin layer above the junction. Reason (R): A p-n junction diode under no condition can be used as a solar cell. It can be used only as a light-emitting diode for optoelectronic applications.
When the p-n junction diode is forward biased, the width of the depletion region __________
Which of the following is the correct match based on the application of diodes? (considering general trends) (a) Zener diode -- Reverse biased (b) Photodiode - Forward biased (c) Half wave Rectifier - Both Forward and reversed biased
When a P-N junction diode is reversed biased the thickness of depletion layer-