For a 0.8-μm CMOS fabrication process: Vtn= 0.8 V, Vtp = −0.9 V, μnCox = 90 μA/V2, μpCox = 30 μA/V2, Cox = 1.9 fF/μm2, VA (n-channel devices) = 8L (μm), and |VA| (p-channel devices) = 12L (μm). Find the small-signal model parameters (gm, ro and gmb) for a PMOS transistor having W/L = 20 μm/2 μm and operating at ID = 100 μA and |VSB| = 1V.
For a 0.8-μm CMOS fabrication process: Vtn= 0.8 V, Vtp = −0.9 V, μnCox = 90 μA/V2, μpCox = 30 μA/V2, Cox = 1.9 fF/μm2, VA (n-channel devices) = 8L (μm), and |VA| (p-channel devices) = 12L (μm). Find the small-signal model parameters (gm, ro and gmb) for a PMOS transistor having W/L = 20 μm/2 μm and operating at ID = 100 μA and |VSB| = 1V. Correct Answer gm= 0.24mA/V, ro=240 kΩ, gmb = 0.048 mA/V
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Feb 20, 2025