The following statements refer to an n channel FET operated in the active region: 1. The gate voltage VGS reverse biases the junction 2. The drain voltage VDD is negative with respect to the source 3. The current in the n channel is due to electrons 4. Increasing the reveres bias VGS increases the cross section for conduction Which of these statements are correct?

Option 2 : 1 and 3

• There are two basic configurations of junction field-effect transistor i.e. the N-channel JFET and the p-channel JFET.
• The N-Channel JEFT is doped with donor impurities i.e. the flow of current through the channel is negative (hence the term N-channel) in the form of electrons.
• The p – the channel has acceptor impurities, in the form of holes.
• If a small negative voltage is now applied to the gate, the size of the depletion region begins to increase reducing the overall effective area of the channel and thus reducing the current flowing through it. Hence gate voltage V_GS reverse binges the junction.