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A semiconductor X is made by doping a germanium crystal with arsenic (Z = 33). A second semiconductor is made by doping germanium with indium (Z = 49). The two are joined end to end and connected to a battery as shown. Which of the following statements is correct

A semiconductor X is made by doping a germanium crystal with arsenic (Z = 33). A second semiconductor is made by doping germanium with indium (Z = 49). The two are joined end to end and connected to a battery as shown. Which of the following statements is correct Correct Answer X is N-type, Y is P-type and the junction is reverse biased

Electronic configuration is given as: 1s22s22p63s23p64s23d104p65s24d105p66s24f145d106p67s25f146d10….

Arsenic: Z = 33

1s2

2s2

2p6

3s2

3p6

3d10

4s2

4p3

 

Arsenic has only three outer electrons, so it is an acceptor impurity. Hence X becomes N-type semiconductor.

Indium: Z = 49

1s2

2s2

2p6

3s2

3p6

3d10

4s2

4p6

4d10

5s2

5p1

 

Indium has five valence electrons, so it a donor impurity. Hence Y becomes P-type semiconductor. Also N (i.e. X) is connected to positive terminal of battery and P (i.e. Y) is connected to negative terminal of battery so PN-junction is reverse biased.

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