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The figure shows the high-frequency C-V curve of a MOS capacitor (at T = 300 K) with ϕms = 0 V and no oxide charges. The flat-band, inversion, and accumulation conditions are represented, respectively, by the points

The figure shows the high-frequency C-V curve of a MOS capacitor (at T = 300 K) with ϕms = 0 V and no oxide charges. The flat-band, inversion, and accumulation conditions are represented, respectively, by the points Correct Answer Q, R, P

1) Flat band voltage is the voltage where there is a no-charge present in the oxide or oxide semiconductor interface.

2) As the gate voltage Va increase, more electrons are attracted to the oxide-semiconductor interface. A-n type channel is formed.

The inversion takes place at R

3) For negative gate voltage, more holes are accumulated near the gate.

Accumulations take place at P.

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