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Most of the electrons in the base of an NPN transistor flow

Most of the electrons in the base of an NPN transistor flow Correct Answer into the collector

  • Electrons are injected from the n-type emitter into the base
  • The base junction is rich in holes
  • Some of the injected electrons combine with the holes
  • Majority of electrons in base cross the base region and enter into the collector region

Related Questions

For transistor action (a) Base, emitter, and collector regions should have similar size and doping concentrations. (b) The base region must be very thin and lightly doped. (c) The emitter-base junction is forward biased and the base-collector junction is reverse biased. (d) Both the emitter-base junction as well as the base-collector junction are forward biased. Which one of the following pairs of statements is correct?
In the operation of an NPN transistor, the electrons cross which region? 
interface Base{ boolean m1 (); byte m2(short s);}

which two code fragments will compile?
1. interface Base2 implements Base {}2. abstract class Class2 extends Base { public boolean m1(){ return true; }}3. abstract class Class2 implements Base {}4. abstract class Class2 implements Base { public boolean m1(){ return (7 > 4); }}5. abstract class Class2 implements Base { protected boolean m1(){ return (5 > 7) }}
In NPN transistor, when emitter junction is forward biased and collector junction is reverse biased, the transistor will operate in
Consider the following statements regarding an N-P-N Bipolar Junction Transistor: 1. Emitter diode is forward biased and the collector diode is reverse biased 2. Emitter has many free electrons 3. Free electrons are injected into the base and pass through the collector 4. Depletion layers around junction J1 and J2 of BJT are widened. Which of the above statements are correct?
For a NPN bipolar transistor, what is the main stream of current in the base region?
What happens if a voltage of about 0.7 V is applied across the base and emitter of the NPN transistor?
For a narrow base PNP BJT, the excess minority carrier concentrations (ΔnE for emitter, ΔpB for base, ΔnC for collector) normalized to equilibrium minority carrier concentrations (nE0 for emitter, pB0 for base, nC0 for collector) in the quasi-neutral emitter, base and collector regions are shown below. Which one of the following biasing modes is the transistor operating in?
A transistor is used in common emitter mode as an amplifier. Then a. The base-emitter junction is forward biased b. The base-emitter junction is reverse biased  c. The input signal is connected in series with the voltage applied to the base-emitter junction  d. The input signal is connected in series with the voltage applied to bias the base-collector junction Which of the following statement is true?
Which of the following conditions must be satisfied for a transistor to be in saturation? 1. Its collector to base junction should be under forward bias 2. Its collector to base junction should be under reverse bias 3. Its emitter to base junction should be under reverse bias 4. Its emitter to base junction should be under forward bias Which of the above conditions are correct?