Related Questions

In a single stage transistor amplifier, RC and RL represent collector resistance and load resistance respectively. The transistor sees a d.c. load of ___________
A RC + RL
B RC || RL
C RL
D RC
The value of collector load RC in a transistor amplifier is ___________ the output impedance of the transistor.
A The same as
B Less than
C More than
D None of the above
In order to get more voltage gain from a transistor amplifier, the transistor used should have ___________
A Thin base
B Thin collector
C Wide emitter
D None of the above
In the initial stages of a multistage amplifier, we use ___________
A RC coupling
B Transformer coupling
C Direct coupling
D None of the above
The d.c. load of a transistor amplifier is generally ___________ that of a a.c. load
A The same as
B Less than
C More than
D None of the above
Generally, the gain of a transistor amplifier falls at high frequencies due to the
A Internal Capacitance of the device
B Coupling capacitor at the input
C Skin effect
D Coupling capacitor at the output
STP-তে একটি আদর্শ গ্যাসকে প্রথমে তার প্রাথমিক আয়তনের এক-তৃতীয়াংশে সংকুচিত করা হয়, এবং তারপর প্রসারিত হতে দেওয়া হয় যতক্ষণ না তার চাপ প্রাথমিক চাপের অর্ধেক হয়। উভয় প্রক্রিয়ায় গ্যাসের তাপমাত্রা স্থির থাকে। যদি গ্যাসের প্রাথমিক অভ্যন্তরীণ শক্তি । হয়ে থাকে তাহলে এর চূড়ান্ত অভ্যন্তরীণ শক্তি কত? (An ideal gas at STP is first compressed to one-third of its initial volume and then allowed to expand until its pressure is half the initial pressure. The temperature of the gas remains constant during both the processes. If the initial internal energy of the gas is U, what is its final internal energy?)
A U/3
B U/2
C U
D 2U/3
The total gain of a multistage amplifier is less than the product of the gains of individual stages due to ___________
A Power loss in the coupling device
B Loading effect of the next stage
C The use of many transistors
D The use of many capacitors
For faithful amplification by a transistor circuit, the value of VBE should ___________ for a silicon transistor
A Be zero
B Be 0.01 V
C Not fall below 0.7 V
D Be between 0 V and 0.1 V
The leakage current in a silicon transistor is about ___________ the leakage current in a germanium transistor
A One hundredth
B One tenth
C One thousandth
D One millionth

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