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The width of depletion layer of a P-N junction

The width of depletion layer of a P-N junction Correct Answer Is increased under reverse bias

The total width of the depletion region is a function of applied reverse-bias and impurity concentration. Forward bias decreases the depletion region width whilst reverse bias increases it.

Related Questions

Some small cubes of same height 7 cm but variable length and width are put inside a large cuboid of height 21 cm. Length and width of cuboid is 32 cm and 24 cm, respectively. Small cubes are put such that cubes at the bottom most layer is of similar base area; second layer contains all the cubes of similar base area and third layer have all the cubes of similar base area. Which of the following statement(s) given below is / are TRUE? A: If side of each small cubes at bottom most layer is 8 cm, then maximum number of small cubes that can be put at bottom most layer is 12. B: If maximum of 48 cubes can be put at second layer, then side of each cube at second layer is 6 cm. C: If side of each small cubes at third layer is 1.6 cm, then maximum number of small cubes that can be put at third layer is 300.
A diode had a transition capacitance of 1pF and depletion width of 1 µm. The capacitance changes to 10 pF when the depletion width changes. The final depletion width is __________
In a pnp-BJT, when the E-B junction is forward biased and no voltage is applied across C-B junction, what happens to the width of the depletion region in the E-B junction?
Assertion (A): A p-n junction diode with low junction depth can be used as a solar cell when illuminated by suitable light (wavelength) at the top thin layer above the junction. Reason (R): A p-n junction diode under no condition can be used as a solar cell. It can be used only as a light-emitting diode for optoelectronic applications.
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
Assertion (A): A p-n junction has high resistance in reverse direction.
Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
A silicon PN junction diode under revers bias has depletion width of 10µm, relative permittivity is 11.7 and permittivity, ε0 =8.85×10-12F/m. Then depletion capacitance /m2 =?
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