Bissoy.com
Doctors Medicines MCQs Q&A

For an intrinsic semiconductor, $$m_e^ * $$ and $$m_h^ * $$ are respectively, the effective masses of electrons and holes near the corresponding band edges. At a finite temperature, the position of the Fermi level

For an intrinsic semiconductor, $$m_e^ * $$ and $$m_h^ * $$ are respectively, the effective masses of electrons and holes near the corresponding band edges. At a finite temperature, the position of the Fermi level Correct Answer depends on both $$m_e^ * $$ and $$m_h^ * $$

Related Questions

An intrinsic semiconductor with mass of a hole mh, and mass of an electron me is at a finite temperature T. If the top of the valence band energy is Ev and the bottom of the conduction band energy is Ec, the Fermi energy of the semiconductor is
An N-type semiconductor having uniform doping is biased as shown in the figure. If EC is the lowest energy level of the conduction band, EV is the highest energy level of the valance band and EF is the Fermi level, which one of the following represents the energy band diagram for the biased N-type semiconductor?
Which of the following equations represent the correct expression for the band diagram of the p-n junction? (E1=difference between the fermi level of material and conduction band of n material and E2=difference between the conduction band of n material and fermi level of n material)
In a semiconductor it is observed that three-quarters of the current is carried by electrons and one quarters by holes. If the drift speed is three times that of the holes, what is the ratio of electrons to holes?
Consider the following statements: 1. Fermi level in a p-type semiconductor lies close to the top of the valence band. 2. The forbidden energy in Germanium at 0 K is exactly 0.78 eV. 3. When a p-n junction is reverse biased, then electrons and holes move away from the junction. Which of these statements are correct?
In an intrinsic semiconductor relation between number of free electrons (ne) in conduction band and holes (nh) in valence band is given by:
Which of the following statements is/are correct? 1) Conductor contains a large number of electrons in the conduction band at room temperature. No energy gaps exist and the valence and conduction bands overlap. 2) A semiconductor is a material in which the energy gap is so large that practically no electron can be given enough energy to jump this gap. 3) An insulator is a solid with an energy gap small enough for electrons to cross rather easily from the valence band to conduction band.
A simplified energy band-diagram of an intrinsic semiconductor at thermal equilibrium (300 K) is shown. In the accompanying table, which one of the four cloumns correctly represents the listed parameters? Assume same effective mass for electrons and holes.
Physics of Metals in Metallurgy mcq question image
The probability of electrons to be found in the conduction band of an intrinsic semiconductor at finite temperature is which of the following?
If excess charge carriers are created in the semiconductor then the new Fermi level is known as Quasi-Fermi level. Is it true?