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The Transfer characteristic of the different types of MOSFETs is shown below, where ID is drain current and VGS is the Gate-Source voltage, the correct combination of MOSFET w.r.t to transfer characteristics is: Types of MOSFET (P) P – Channel Enhancement MOSFET (Q) P – Channel Depletion MOSFET (R) N – Channel Enhancement MOSFET (S) N – Channel Depletion MOSFET
Choose the correct statement(s) i) The gate circuit impedance of MOSFET is higher than that of a BJT ii) The gate circuit impedance of MOSFET is lower than that of a BJT iii) The MOSFET has higher switching losses than that of a BJT iv) The MOSFET has lower switching losses than that of a BJT
For the circuit given below, the inductance measured across the terminals 1 and 2 was 15 H with open terminals 3 and 4. It was 30 H when terminals 3 and 4 were short-circuited. Both the inductors are having inductances 2H. The coefficient of coupling is ______________
Consider the following statements for Poly-Si deposition: 1. Poly-Si layer is used for gate electrode of MOSFET because it has similar lattice constants with SiO2. 2. Poly-Si layer used for gate electrode of MOSFET for the better mechanical stability due to different thermal expansion coefficients. 3. In VLSI circuits, interconnects can be completed in one or two metal levels. 4. Poly-Si is used for short interconnects. Which of the above statements are correct ?
A MOSFET has how many terminals:
Why is an N-channel MOSFET preferred over a P-channel MOSFET?
Which of the following statement/s about MOSFET is correct? (I) In the P-type device current flows due to electrons. (II) In depletion type of MOSFET channel is already present. (III) Pinch-off occurs at VDS < VGS − VTH
The following item consists of two statements, one labeled as the 'Statement (I)' and the other as 'Statement (II)'. Examine these two statements carefully and select the answers to these items using the codes given below: Statement (I): MOSFET is a field-effect transistor whose drain current is controlled by the voltage applied at the gate. Statement (II): MOSFET is an insulated gate FET. Codes:
In the below input output characteristic of MOSFET amplifier, if Vin > Vin1, the MOSFET is said to operate in:
The N-channel MOSFET is considered better than the P-channel MOSFET due to its