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Choose the correct statement(s) i) The gate circuit impedance of MOSFET is higher than that of a BJT ii) The gate circuit impedance of MOSFET is lower than that of a BJT iii) The MOSFET has higher switching losses than that of a BJT iv) The MOSFET has lower switching losses than that of a BJT
Consider the following statements. 1. BJT is a current controlled device whereas IGBT is a voltage-controlled device. 2. BJT and IGBT have low input impedance whereas PMOSFET has higher input impedance. 3. IGBTs are available at higher voltage ratings than PMOSFETs because of increment in ON state voltage drop is less in IGBT. 4. IGBT and PMOSFETs have different substrate structures. The correct statements are
Consider the following statements (a) BJT is a current controlled device with high input impedance and high gain band width (b) FET is a voltage- controlled device with high input impedance and low gain bandwidth (c) UJT is a negative resistance device and can be used as an oscillator (d) FET and UJT can be used for amplification Which of the above statements are correct 
When both the junctions of bipolar junction transistor (BJT) are in forward biased, then in which region BJT will operate?
In a certain code language, 'Apples are sweet' means 'BJT TI PBS', and 'Sugar is sweet' means 'TPX OP PBS' and 'Sugar present Apple' means 'TPX NU BJT'. Which word in that language means 'Present'?
In a uniformly doped BJT, assume that NE, NB and NC are the emitter, base and collector doping in atoms/cm3, respectively. If the emitter injection efficiency of the BJT is close to unity, which one of the following conditions is TRUE?
For the BJT, β=∞, VBEon=0.7V VCEsat=0.7V. The switch is initially closed. At t=0, it is opened. At which time the BJT leaves the active region?
In a BJT, if the collector-base junction is reverse-biased and the base-emitter junction is forward-biased, which region is the BJT operating in?
In a BJT, if the collector-base junction is forward-biased and the base-emitter junction is forward-biased, which region is the BJT operating in?
In a BJT, if the collector-base junction and the base-emitter junction are both reverse-biased, which region is the BJT operating in?