Related Questions

The value of collector load RC in a transistor amplifier is ___________ the output impedance of the transistor.
A The same as
B Less than
C More than
D None of the above
The input impedance of a JFET is ___________ that of an ordinary transistor
A equal to
B less than
C more than
D none of the above
The input impedance of a transistor connected in ___________ arrangement is the highest
A common emitter
B common collector
C common base
D none of the above
The input impedance of a transistor is ___________
A high
B low
C very high
D almost zero
In order to get more voltage gain from a transistor amplifier, the transistor used should have ___________
A Thin base
B Thin collector
C Wide emitter
D None of the above
For faithful amplification by a transistor circuit, the value of VBE should ___________ for a silicon transistor
A Be zero
B Be 0.01 V
C Not fall below 0.7 V
D Be between 0 V and 0.1 V
For faithful amplification by a transistor circuit, the value of VCE should ___________ for silicon transistor
A Not fall below 1 V
B Be zero
C Be 0.2 V
D None of the above
For reactions in parallel viz A → P (desired product) and A → Q (unwanted product), if the order of the desired reaction is higher than that of the undesired reaction, a
A Batch reactor is preferred over a single CSTR for high yield
B Tubular reactor is preferred over a single CSTR for high yield
C Both A and B
D Single CSTR is the most suitable
In a single stage transistor amplifier, RC and RL represent collector resistance and load resistance respectively. The transistor sees a d.c. load of ___________
A RC + RL
B RC || RL
C RL
D RC
The leakage current in a silicon transistor is about ___________ the leakage current in a germanium transistor
A One hundredth
B One tenth
C One thousandth
D One millionth

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