Related Questions

The parameter hie stands for input impedance in ___________
A CB arrangement with output shorted
B CC arrangement with output shorted
C CE arrangement with output shorted
D None of the above
The dimensions of hie parameter are ___________
A Mho
B Ohm
C Farad
D None of the above
The hfe parameter is called ___________ in CE arrangement with output shorted
A Voltage gain
B Current gain
C Input impedance
D None of the above
In order to get more voltage gain from a transistor amplifier, the transistor used should have ___________
A Thin base
B Thin collector
C Wide emitter
D None of the above
In a single stage transistor amplifier, RC and RL represent collector resistance and load resistance respectively. The transistor sees a d.c. load of ___________
A RC + RL
B RC || RL
C RL
D RC
For faithful amplification by a transistor circuit, the value of VBE should ___________ for a silicon transistor
A Be zero
B Be 0.01 V
C Not fall below 0.7 V
D Be between 0 V and 0.1 V
The leakage current in a silicon transistor is about ___________ the leakage current in a germanium transistor
A One hundredth
B One tenth
C One thousandth
D One millionth
For faithful amplification by a transistor circuit, the value of VCE should ___________ for silicon transistor
A Not fall below 1 V
B Be zero
C Be 0.2 V
D None of the above
The value of collector load RC in a transistor amplifier is ___________ the output impedance of the transistor.
A The same as
B Less than
C More than
D None of the above
If the operating point changes, the h parameters of transistor ___________
A Also change
B Do not change
C May or may not change
D None of the above

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