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Choose the correct statement(s) i) The gate circuit impedance of MOSFET is higher than that of a BJT ii) The gate circuit impedance of MOSFET is lower than that of a BJT iii) The MOSFET has higher switching losses than that of a BJT iv) The MOSFET has lower switching losses than that of a BJT
The Transfer characteristic of the different types of MOSFETs is shown below, where ID is drain current and VGS is the Gate-Source voltage, the correct combination of MOSFET w.r.t to transfer characteristics is: Types of MOSFET (P) P – Channel Enhancement MOSFET (Q) P – Channel Depletion MOSFET (R) N – Channel Enhancement MOSFET (S) N – Channel Depletion MOSFET
MOSFET has no switching loss while BJT has.
Which of the following statements is/are correct? 1) Conductor contains a large number of electrons in the conduction band at room temperature. No energy gaps exist and the valence and conduction bands overlap. 2) A semiconductor is a material in which the energy gap is so large that practically no electron can be given enough energy to jump this gap. 3) An insulator is a solid with an energy gap small enough for electrons to cross rather easily from the valence band to conduction band.
Diagram shows transient heat conduction in an infinite plane wall. Identify the correct boundary condition in transient heat conduction in solids with finite conduction
The conduction loss versus device current characteristic of a power MOSFET is best approximated by a ________
Which of the following losses are NOT deductible from business Income? A. Loss incurred in closing down the business B. Loss incurred due to damage destruction etc. of capital assets C. Loss of stock-in-trade due to enemy action D. Loss sustained before the business is commenced E. Loss of raw material finished good-in-transit Choose the correct answer from the options given below:
During the short-circuit test of a synchronous machine, which of the following are accounted for in the short-circuit test loss? (i), I2R loss in the armature winding due to the flow of short-circuiting (AC) current (ii) Local core loss caused by armature leakage flux (iii) Core loss due to resultant air-gap flux. (iv) Windage and friction loss
Consider the following statements. 1. BJT is a current controlled device whereas IGBT is a voltage-controlled device. 2. BJT and IGBT have low input impedance whereas PMOSFET has higher input impedance. 3. IGBTs are available at higher voltage ratings than PMOSFETs because of increment in ON state voltage drop is less in IGBT. 4. IGBT and PMOSFETs have different substrate structures. The correct statements are
As compared to power MOSFET, a BJT has