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IMPATT diodes employ impact ionization technique which is a noisy mechanism of generating charge carriers.

IMPATT diodes employ impact ionization technique which is a noisy mechanism of generating charge carriers. Correct Answer true

IMPATT devices employ impact ionization techniques which is too noisy. Hence in order to achieve low noise figure, impact ionization is avoided in BARITT diodes. The minority injection is provided by punch through of the intermediate region.

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