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The techniques by Burros and Dawson in reference to homo structure device is to use an etched well in GaAs structure.

The techniques by Burros and Dawson in reference to homo structure device is to use an etched well in GaAs structure. Correct Answer True

Burros and Dawson provided a technique to restrict emission to small active region within device thus providing high radiance. Etched well in a GaAs substrate is used to prevent heavy absorption of emitted region and physically accommodating the fiber. These structures provide low thermal impedance allowing high current densities of high radiance.

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