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Consider the following statements (a) BJT is a current controlled device with high input impedance and high gain band width (b) FET is a voltage- controlled device with high input impedance and low gain bandwidth (c) UJT is a negative resistance device and can be used as an oscillator (d) FET and UJT can be used for amplification Which of the above statements are correct 
Which of the following is an expression for gm0?
Thermal runaway is not possible in FET because as the temperature of FET increases
Consider the following statements regarding a differential amplifier using an FET pair. The differential output offset voltage is due to: 1. Mismatch between FET parameters 2. Difference between the values of resistors used in the circuit even though they are marked nominally equal 3. Variation in the operating voltage of the circuit Which of the above statements are correct?
How does a FET behave when the v-I characteristics are to the left of pinch off for an n channel FET?
Two boysM and N start from the same point. M walks 5 km south, then turns to his left and walks 6 km, then turns to his right and walks 5 km, and then again turns to his right and walks 6 km. At the same time, N walks 5 km north, then turns to his left and walks 6 km, then turns to his left and walks 10 km, and then again turns to his left and walks 3 km and then turns to his right and walks 5 km.What is the position of N with respect to M?
A boy of 50 kg mass climbs 40 stairs in 9 seconds. If the height of each stair is 15cm, then find his power. (g = 10ms-2)
A boy of 50 kg mass climbs 45 stairs in 9 seconds. If the height of each stair is 15cm, then calculate his power. (g= 10ms-2)
When an object of 15 kg is at a height of 10 m from the ground, then find the energy contained in it ? (g = 10ms-2)
A boy of 50 kg mass climbs 40 stairs in 10 seconds. If the height of each stair is 15cm, then calculate his power. (g = 10ms-2)