Which of the following statements is TRUE in the case of an IGBT?
Which of the following statements is TRUE in the case of an IGBT? Correct Answer Its ON-state voltage drop is very low
IGBT:
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- An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch.
- It was developed to combine high efficiency and fast switching. Its on-state voltage drop is low compared to other thyristors.
- It consists of four alternating layers (P-N-P-N) that are controlled by a metal–oxide semiconductor (MOS) gate structure without regenerative action.
- It has very low ON-state voltage drop.
Important Points:
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BJT |
MOSFET |
IGBT |
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Bipolar device |
Unipolar device |
Bipolar device, Three terminal device (emitter collector and gate) |
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Low input impedance |
High input impedance |
High input impedance |
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Current controlled device |
Voltage controlled device |
Voltage controlled device |
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Low on-state voltage drop and low conduction loss |
High on-state voltage drop and higher conduction loss |
Low forward voltage drop, low ON state power loss than MOSFET, low conduction loss than MOSFET |
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Secondary breakdown occurs |
Free from the secondary breakdown |
Secondary breakdown does not occur |
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Negative temperature coefficient |
Positive temperature coefficient |
Positive temperature coefficient |
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Not advisable for parallel operation |
advisable for parallel operation |
Used for parallel operation |
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Lower operating frequency(10kHz) |
higher operating frequency(100kHz) |
|
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On state in the saturation region |
On state in the ohmic region |
|
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Controlled turn on and turn off device |
Control turn on and turn off device |
Controlled turn on and turn off device |
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Turn on and turn off time depend on junction capacitance |
Smaller turn off time |
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Controlled signal requirement continuously |
Controlled signal requirement continuously |
Controlled signal requirement continuously |