Which of the following statements is TRUE in the case of an IGBT?

Which of the following statements is TRUE in the case of an IGBT? Correct Answer Its ON-state voltage drop is very low

IGBT:

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  • An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch.
  • It was developed to combine high efficiency and fast switching. Its on-state voltage drop is low compared to other thyristors.
  • It consists of four alternating layers (P-N-P-N) that are controlled by a metal–oxide semiconductor (MOS) gate structure without regenerative action.
  • It has very low ON-state voltage drop.

 

Important Points:

BJT

MOSFET

IGBT

Bipolar device

Unipolar device

Bipolar device, Three terminal device (emitter collector and gate)

Low input impedance

High input impedance

High input impedance

Current controlled device

Voltage controlled device

Voltage controlled device

Low on-state voltage drop and low conduction loss

High on-state voltage drop and higher conduction loss

Low forward voltage drop, low ON state power loss than MOSFET, low conduction loss than MOSFET

Secondary breakdown occurs

Free from the secondary breakdown

Secondary breakdown does not occur

Negative temperature coefficient

Positive temperature coefficient

Positive temperature coefficient

Not advisable for parallel operation

advisable for parallel operation

Used for parallel operation

Lower operating frequency(10kHz)

higher operating frequency(100kHz)

 

On state in the saturation region

On state in the ohmic region

 

Controlled turn on and turn off device

Control turn on and turn off device

Controlled turn on and turn off device

Turn on and turn off time depend on junction capacitance

Smaller turn off time

 

Controlled signal requirement continuously

Controlled signal requirement continuously

Controlled signal requirement continuously

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