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Which of the following statements about an Insulated Gate Bipolar Transistor (IGBT) is NOT true?

Which of the following statements about an Insulated Gate Bipolar Transistor (IGBT) is NOT true? Correct Answer The IGBT is slower than a BJT

IGBT:

  • The IGBT is developed by combining the characteristics of a BJT and a MOSFET
  • The on-state losses of an IGBT are lesser than a MOSFET
  • The switching frequency of IGBT is very high compared to BJT. So it is faster than BJT.
  • The IGBT contains a parasitic thyristor

Important Points

BJT

MOSFET

IGBT

Bipolar device

Unipolar device

The bipolar device, Three terminal device (emitter-collector and gate)

Low input impedance

High input impedance

High input impedance

Current controlled device

Voltage-controlled device

Voltage-controlled device

Low on-state voltage drop and low conduction loss

High on-state voltage drop and higher conduction loss

Low forward voltage drop, low ON state power loss than MOSFET, low conduction loss than MOSFET

Secondary breakdown occurs

Free from the secondary breakdown

The secondary breakdown does not occur

Negative temperature coefficient

Positive temperature coefficient

Positive temperature coefficient

Not advisable for parallel operation

advisable for parallel operation

Used for parallel operation

Lower operating frequency(10kHz)

higher operating frequency(100kHz)

 

On state in the saturation region

On state in the ohmic region

 

Controlled turn on and turn off the device

Control turn on and turn off the device

Controlled turn on and turn off the device

Turn on and turn off time depend on junction capacitance

Smaller turn off time

 

Controlled signal requirement continuously

Controlled signal requirement continuously

Controlled signal requirement continuously

Related Questions

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