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Which of the following is NOT a minority carrier semiconductor device ?

Which of the following is NOT a minority carrier semiconductor device ? Correct Answer JFET

JFET:

  • JFET stands for Junction Field Effect Transistor.
  • A field-effect transistor is a voltage-controlled device i.e. the output characteristics of the device are controlled by the input voltage.
  • A JFET is a three-terminal semiconductor device in which current conduction is by one type of carrier i.e. electrons or holes.
  • The current conduction is controlled by means of an electric field between the gate and the conducting channel of the device.
  • To control the conduction of current from the source to the drain, the gate voltage must be more negative than the source voltage.
  • JEFTs are further divided into two types that n-channel JEFT and p-channel JEFT. The three leads of a JEFT are labeled source, gate, and drain. 
  • JFET is a three-terminal voltage-controlled device. The voltage applied across the gate is used to control the current through the drain.
  • JFET is a majority charge carrier device.

[ alt="121112" src="//storage.googleapis.com/tb-img/production/19/02/121112.PNG" style="width: 274px; height: 222px;">

Hence option (1) is correct

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BJT (Bipolar junction transistor):

  • The Bipolar Transistor basic construction consists of two PN-junctions producing three connecting terminals with each terminal being given a name to identify it from the other two.
  • These three terminals are known and labelled as the Emitter (E), the Base (B) and the Collector (C) respectively.
  • It is a bipolar device and current depends on both majority and minority charge carrier

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Thyristor:

  • A thyristor is a four-layer semiconductor of a p-n-p-n structure with three p-n junctions.
  • It is a minority carrier device.
  • It has three terminals: the anode, the cathode, and the gate.
  • They are operated as bi-stable switches from non-conducting to conducting state.
  • It is also called a unilateral switch.
  • The junctions along with the thyristor symbol are as shown:

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 IGBT:

  • Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch.
  • It is a 4 layer PNPN device that combines an insulated gate N-channel MOSFET input with a PNP BJT output in a type of Darlington configuration.

  • The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance and large bipolar current-carrying capability.

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