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The metal–oxide–semiconductor field-effect transistor , also known as the metal–oxide–silicon transistor , is a type of insulated-gate field-effect transistor that is fabricated by the controlled oxidation of a semiconductor, typically silicon. The voltage of the covered gate determines the electrical conductivity of the device; this ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals.
The MOSFET is the basic building block of most modern electronics, and the most frequently manufactured device in history, with an estimated total of 13 sextillion MOSFETs manufactured between 1960 and 2018. It is the most common semiconductor device in digital and analog circuits, and the most common power device. It was the first truly compact transistor that could be miniaturized and mass-produced for a wide range of uses. MOSFET scaling and miniaturization has been driving the rapid exponential growth of electronic semiconductor technology since the 1960s, and enable high-density integrated circuits such as memory chips and microprocessors.