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The Urbach Energy, or Urbach Edge, is a parameter typically denoted E 0 {\displaystyle E_{0}} , with dimensions of energy, used to quantify energetic disorder in the band edges of a semiconductor. It is evaluated by fitting the absorption coefficient as a function of energy to an exponential function. It is often used to describe electron transport in structurally disordered semiconductors such a hydrogenated amorphous silicon.
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