1. Gallium phosphide
  2. Indium gallium nitride
  3. Germanium
  4. Gallium arsenide
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1 Answers

Option 3 : Germanium

The correct answer is ​Germanium.

  • Silicon and germanium are not suitable because those junctions produce heat and no appreciable IR or visible light.
    • Hence Germanium is NOT suitable for the fabrication of a light-emitting diode structure.

  • The LED (light-emitting diode) is a PN junction device that emits light when a current passes through it in the forward direction, i.e. when LED is forward biased, it emits light.
  • In an LED, this energy lies in the visible region of electromagnetic radiation, and the photon released is perceived as light.
  • The compound semiconductor Gallium Arsenide – Phosphide is used for making LEDs of different colours.
  • Gallium Arsenide is used for making infrared LED.
  • Gallium phosphide, Indium gallium nitride, and Gallium arsenide are used for the fabrication of a light-emitting diode.
  • LEDs are generally fabricated with Direct Band Gap (DBG) semiconductors like GaAs, GaAsP, and GaP.
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