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Option 1 : MOSFET and BJT
IGBT:
- Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch.
- It is a 4 layer PNPN device that combines an insulated gate N-channel MOSFET input with a PNP BJT output in a type of Darlington configuration.
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Characteristics:
- High superior ON-state characteristics
- Good switching speed
- Low gate current
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