Consider the following statements with regard to power diodes: 1. The breakdown voltage is directly proportional to the doping density of the drift region. 2. Losses in the diode are less due to conductivity modulation of the drift region in the on-state. 3. The vertically oriented structure supports large blocking voltages. Which of the above statements is/are correct?

1 only
2 only
3 only
1, 2 and 3

LohaHridoy

4 views

2025-01-04 04:42

1 Answers

AhmedNazir

Option 2 : 2 only

The breakdown voltage is inversely proportional to the doping density of the drift region. Hence statement 1 is false.
Power diodes and SCRs comes under minority carrier devices. In minority carrier devices a process called conductivity modulation phenomenon exists. Due to this process when the device enters into conduction state the ON state losses will be less. Hence statement 2 is true.

4 views Answered 2022-09-04 04:29

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