Programmable Read Only Memory MCQ

Test your knowledge with important Programmable Read Only Memory MCQ and their applications. These MCQs are beneficial for competitive exams too. Explore 30 + more Programmable Read Only Memory MCQs at Bissoy

• What is the bit storage capacity of a ROM with a 1024 × 8 organization?
  ক

  1024

  খ

  4096

  গ

  2048

  ঘ

  8192
• How many address bits are needed to operate a 2K * 8-bit memory?
  ক

  10

  খ

  11

  গ

  12

  ঘ

  13
• How many memory locations are addressed using 18 address bits?
  ক

  165,667

  খ

  245,784

  গ

  262,144

  ঘ

  212,342
• IC 74186 is of ______________
  ক

  1024 bits

  খ

  32 bits

  গ

  512 bits

  ঘ

  64 bits
• For the implementation of PROM, which IC is used?
  ক

  IC 74187

  খ

  IC 74186

  গ

  IC 74185

  ঘ

  IC 74184
• The PROM starts out with _____________
  ক

  1s

  খ

  0s

  গ

  Null

  ঘ

  Both 1s and 0s
• PROM is programmed by _____________
  ক

  EPROM programmer

  খ

  EEPROM programmer

  গ

  PROM programmer

  ঘ

  ROM programmer
• The full form of FAMOS is _____________
  ক

  Floating Gate Avalanche Injection MOS

  খ

  Float Gate Avalanche Injection MOS

  গ

  Floating Gate Avalanche Induction MOS

  ঘ

  Float Gate Avalanche Induction MOS
• During programming p-n junction is _____________
  ক

  Avalanche reverse biased

  খ

  Avalanche forward biased

  গ

  Zener reverse biased

  ঘ

  Zener reverse biased
• Silicon links are made up of _____________
  ক

  Polycrystalline silicon

  খ

  Polycrystalline magnesium

  গ

  Nichrome

  ঘ

  Silicon dioxide
• Metal links are made up of ___________
  ক

  Polycrystalline

  খ

  Magnesium sulphide

  গ

  Nichrome

  ঘ

  Silicon dioxide
• How many types of fuse technologies are used in PROMs?
  ক

  2

  খ

  3

  গ

  4

  ঘ

  5
• The cell type used inside a PROM is ___________
  ক

  Link cells

  খ

  Metal cells

  গ

  Fuse cells

  ঘ

  Electric cells
• Fusing process is ___________
  ক

  Reversible

  খ

  Irreversible

  গ

  Synchronous

  ঘ

  Asynchronous
• What is a fusing process?
  ক

  It is a process by which data is passed to the memory

  খ

  It is a process by which data is read through the memory

  গ

  It is a process by which programs are burnout to the diode/transistors

  ঘ

  It is a process by which data is fetched through the memory
• How much locations an 8-bit address code can select in memory?
  ক

  8 locations

  খ

  256 locations

  গ

  65,536 locations

  ঘ

  131,072 locations
• Which part of a Flash memory architecture manages all chip functions?
  ক

  Program verify code

  খ

  Floating-gate MOSFET

  গ

  Command code

  ঘ

  Input/Output pins
• How can ultraviolet erasable PROMs be recognized?
  ক

  There is a small window on the chip

  খ

  They will have a small violet dot next to the #1 pin

  গ

  Their part number always starts with a “U”, such as in U12

  ঘ

  They are not readily identifiable, since they must always be kept under a small cover
• Which of the following best describes the fusible-link PROM?
  ক

  Manufacturer-programmable, reprogrammable

  খ

  Manufacturer-programmable, one-time programmable

  গ

  User-programmable, reprogrammable

  ঘ

  User-programmable, one-time programmable
• How many 8 k × 1 RAMs are required to achieve a memory with a word capacity of 8 k and a word length of eight bits?
  ক

  Eight

  খ

  Two

  গ

  One

  ঘ

  Four
• The bit capacity of a memory that has 2048 addresses and can store 8 bits at each address is ___________
  ক

  4096

  খ

  16384

  গ

  32768

  ঘ

  8129
• PROMs are available in ___________
  ক

  Bipolar and MOSFET technologies

  খ

  MOSFET and FET technologies

  গ

  FET and bipolar technologies

  ঘ

  MOS and bipolar technologies
• Which of the following is programmed electrically by the user?
  ক

  ROM

  খ

  EPROM

  গ

  PROM

  ঘ

  EEPROM
• Why did PROM introduced?
  ক

  To increase the storage capacity

  খ

  To increase the address locations

  গ

  To provide flexibility

  ঘ

  To reduce the size
• The time from the beginning of a read cycle to the end of tACS/tAA is called as ____________
  ক

  Write enable time

  খ

  Data hold

  গ

  Read cycle time

  ঘ

  Access time