Active and Passive Components of IC MCQ

Test your knowledge with important Active and Passive Components of IC MCQ and their applications. These MCQs are beneficial for competitive exams too. Explore 30+ more Active and Passive Components of IC MCQs on Bissoy. Bissoy App

• In application such as RF and IF circuits, inductor cannot be avoided. How to manage such situation?
  ক

  Using inductors external to IC package

  খ

  Thin film inductor spiral are used

  গ

  Thin film hybrid microwave can be used

  ঘ

  All of the mentioned
• Which circuit is used to replace inductor in IC components?
  ক

  RC active network

  খ

  PN-junction diode

  গ

  LC active network

  ঘ

  None of the mentioned
• Why inductor is avoided in Integrated Circuit component?
  ক

  They provide many losses compared to other IC components

  খ

  IC devices are essentially two dimensions

  গ

  Device density of IC increases

  ঘ

  Fabrication process of these components are complicated
• In MOS capacitor, the preference in dielectric layer is given to Silicon Nitride (Si3N4) because
  ক

  It makes capacitor non-polar

  খ

  It contain a small resistance

  গ

  It offers less processing step

  ঘ

  It reduces failure mechanism
• Which is considered to be a serious disadvantages of thin film capacitor, when Al2O3is used as dielectric.
  ক

  Additional fabrication step required

  খ

  It require over voltage protection

  গ

  Higher dielectric constant value is required

  ঘ

  All of the mentioned
• Which is used as the dielectric layer in MOS Capacitor?
  ক

  Silicon Nitride (Si3N4)

  খ

  Aluminium oxide (Al2O3)

  গ

  Tantalum oxide (Ta2O5)

  ঘ

  All of the mentioned
• The capacitance of junction capacitor does not depend upon
  ক

  Impurity concentration of p-type epitaxial layer

  খ

  Impurity concentration of n-type epitaxial layer

  গ

  Area of the junction

  ঘ

  Voltage across the junction
• Pick out the incorrect statement
  ক

  Sheet resistance have smaller and lesser parasitic components

  খ

  Value of resistor can be easily adjusted after fabrication

  গ

  Resistance in the range 100kΩ possible using nichrome resistors

  ঘ

  Thin film resistors are more stable
• Which of the following is not used as metallic film in the thin film resistor?
  ক

  Nichrome (NiCr) c) Stannic oxide (SnO2) d) Silicon dioxide (SiO2) View Answer]

  খ

  Tantalum (Ta)

  গ

  Stannic oxide (SnO2)

  ঘ

  Silicon dioxide (SiO2)
• How pinched resistor can give resistance in order of mega-ohm in a reasonably small area?
  ক

  By increasing fabrication steps

  খ

  By offering bulk resistance in n-region

  গ

  By reducing conduction path

  ঘ

  By limiting the thickness of are
• Which integrated resistor can achieve high value of sheet resistance?
  ক

  Pinched resistor

  খ

  Epitaxial resistor

  গ

  Thin film resistor

  ঘ

  All of the mentioned
• The number of square contained in the integrated resistor by diffused resistor method depend on ratio of
  ক

  ρ/t

  খ

  ρ×L/W

  গ

  W/L×t

  ঘ

  L/W
• If a 25Ω diffused resistor is to be designed for an emitter resistor, determine the pattern in which it is fabricated?
  ক

  20mil long by 5mil wide

  খ

  25mil long by 1mil wide

  গ

  5mil long by 1mil wide

  ঘ

  16mil long by 4mil wide
• Consider a 52cm×52cm material of uniform resistivity 100Ωm and thickness 3cm. Find the area and resistance of this sheet of material.
  ক

  16 m2, 1.923 Ω/square

  খ

  8112 cm2, 1.733 Ω/square

  গ

  156 cm2, 33.33 Ω/square

  ঘ

  901 cm2, 3.333 Ω/square
• Determine the formula for sheet resistance (Rs).
  ক

  R×L×W

  খ

  R×(L×ρ)/W

  গ

  R×(W/L)

  ঘ

  R×(W×ρ)/L
• Which of the following is not true about diffused resistor?
  ক

  Limitation due to small range of resistance

  খ

  Resistance depends upon surface geometry

  গ

  Resistance depends on diffusion characteristic of material

  ঘ

  Diffused resistors are non-economical
• Which of the following resistor is not used as an integrated resistor?
  ক

  Poly gate resistor

  খ

  Pinched resistor

  গ

  Epitaxial resistor

  ঘ

  Thin film resistor
• Find the application areas, where Schottky diode can be used?
  ক

  Radio frequency

  খ

  Power rectifier

  গ

  Clamping diode

  ঘ

  All of the mentioned
• The flow of current in Schottky barrier diode is due to
  ক

  Majority and Minority carriers

  খ

  Majority carriers

  গ

  Minority carriers

  ঘ

  None of the mentioned
• How the ohmic contact is formed in metal semiconductor diode? (AL-Aluminium)
  ক

  n+ diffusion in p-region near AL lead

  খ

  p+ diffusion in p-region near AL lead

  গ

  n+ diffusion in n-region near AL lead

  ঘ

  p+ diffusion in n-region near AL lead
• In Schottky barrier diode, which contact has similar characteristics to that of an ordinary PN diode?
  ক

  Ohmic contact

  খ

  Schottky barrier contact

  গ

  Both ohmic and Schottky barrier contact

  ঘ

  None of the mentioned
• The number of leads in schottky barrier diode are
  ক

  Four

  খ

  Three

  গ

  Two

  ঘ

  Six
• Choose the appropriate value of diode to get a speedy diode from the given values of storage time (n) in sec and forward voltage (V γ).
  ক

  n = 56 , V γ = 0.96

  খ

  n = 100 , V γ = 0.92

  গ

  n = 9 , V γ = 0.85

  ঘ

  n = 53 , V γ = 0.95
• Which transistor is best suitable to achieve very fast switching in digital circuits?
  ক

  Lateral pnp transistor

  খ

  Schottky transistor

  গ

  Multi-emitter transistor

  ঘ

  NPN transistor
• The advantage of Multi-emitter transistor is
  ক

  To reduce fabrication steps

  খ

  To save chip area

  গ

  To lower design consideration

  ঘ

  To provide linear output
• The diffusion of collector impurities in npn transistor should be small because,
  ক

  No additional diffusion or masking steps required

  খ

  Bandwidth is controlled by lateral diffusion of p-type impurity

  গ

  Collector need not be kept at negative potential

  ঘ

  None of the mentioned
• State the correct reason for neglecting pnp transistor.
  ক

  Increase in the series collector resistance of pnp transistor

  খ

  Parasitic capacitance appears between collector and substrate

  গ

  Current gain of pnp transistor is as low as 1.5 to 30

  ঘ

  None of the mentioned
• Which method is used in the fabrication of pnp transistor?
  ক

  Vertical substrate pnp

  খ

  Triple diffused pnp

  গ

  Lateral pnp

  ঘ

  All of the mentioned
• At what potential, the substrate of a vertical pnp transistor should be kept to attain good isolation?
  ক

  Same potential

  খ

  Positive potential

  গ

  Different potential

  ঘ

  Negative potential
• The ‘buried layer’ reduces collector series resistance by providing,
  ক

  A low resistivity current path from n-type layer to n+ contact layer

  খ

  A low resistivity current path from p-type layer to n+ contact layer

  গ

  A high resistivity current path from n-type layer to n+ contact layer

  ঘ

  A high resistivity current path from p-type layer to n+ contact layer