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Which of the following conditions must be satisfied for a transistor to be in saturation? 1. Its collector to base junction should be under forward bias 2. Its collector to base junction should be under reverse bias 3. Its emitter to base junction should be under reverse bias 4. Its emitter to base junction should be under forward bias Which of the above conditions are correct?
If CT is the transition capacitance, which of the following are true? 1) in forward bias, CT dominates 2) in reverse bias, CT dominates 3) in forward bias, diffusion capacitance dominates 4) in reverse bias, diffusion capacitance dominates
A transistor is used in common emitter mode as an amplifier. Then a. The base-emitter junction is forward biased b. The base-emitter junction is reverse biased  c. The input signal is connected in series with the voltage applied to the base-emitter junction  d. The input signal is connected in series with the voltage applied to bias the base-collector junction Which of the following statement is true?
Assertion (A): A p-n junction has high resistance in reverse direction.Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
Assertion (A): A p-n junction has high resistance in reverse direction.
Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
Consider an abrupt PN junction. Let V0 be the built in potential of this junction and VR be the reverse bias voltage applied. If the junction capacitance Cj is 1pF for V0+VR =1V, then for V0+VR =4V what will be the value of Cj?
For transistor action (a) Base, emitter, and collector regions should have similar size and doping concentrations. (b) The base region must be very thin and lightly doped. (c) The emitter-base junction is forward biased and the base-collector junction is reverse biased. (d) Both the emitter-base junction as well as the base-collector junction are forward biased. Which one of the following pairs of statements is correct?
For an abrupt PN junction diode, small signal capacitance is 1nF/cm2 at zero bias condition.If the built in voltage, Vbi is 1V, the capacitance at reverse bias of 99V is?
Match Old name with the new name. Old Name  New Name I. Allahabad Junction a) Pandit Deen Dayal Upadhyaya Junction II. Manduadih railway station b) Prayagraj Junction III. Mughalsarai junction c) Prayagraj Rambaug Railway station IV. Allahabad City railway station d) Banaras Railway Station Choose the correct code given below:
Assertion (A): A p-n junction diode with low junction depth can be used as a solar cell when illuminated by suitable light (wavelength) at the top thin layer above the junction. Reason (R): A p-n junction diode under no condition can be used as a solar cell. It can be used only as a light-emitting diode for optoelectronic applications.