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Consider the following statements regarding Thyristor: 1. It conducts when forward biased and positive current flows through the gate 2. It conducts when forward biased and negative current flows through the gate 3. It commutates when reverse biased and negative current flows through the gate 4. It commutates when the gate current is withdrawn Which of these statement(s) is/are correct?
Consider the following statements regarding JFET: 1. The relationship between the drain current and gate-to-source voltage of a JFET is a nonlinear. 2. The minimum current for JFET occurs at pinch-off voltage defined by VGS = VP. 3. A current controlled device is one in which a current defines the operating conditions of the device. Which of the above statements are correct?
Consider the following statements: 1. In a silicon controlled rectifier (SCR), if the cathode gate is reverse-biased, then the SCR cannot fire at all. 2. The turn-on time of an SCR increases with temperature. 3. After an SCR is turned on, it can be made to turn off again by reverse biasing the gate. 4. Gate recovery time is the minimum time that the anode voltage must be maintained below holding voltage VH to turn off the SCR. Which of these statements are correct?
Which of the following is the correct match based on the application of diodes? (considering general trends) (a) Zener diode -- Reverse biased (b) Photodiode - Forward biased (c) Half wave Rectifier - Both Forward and reversed biased
For transistor action (a) Base, emitter, and collector regions should have similar size and doping concentrations. (b) The base region must be very thin and lightly doped. (c) The emitter-base junction is forward biased and the base-collector junction is reverse biased. (d) Both the emitter-base junction as well as the base-collector junction are forward biased. Which one of the following pairs of statements is correct?
What can be the effect on the width of the conductor channel in a JFET, if the gate to source voltage is reverse biased?
Consider the following sentences: (i) The number of candidates who appear for the GATE examination is staggering. (ii) A number of candidates from my class are appearing for the GATE examination. (iii) The number of candidates who appear for the GATE examination are staggering. (iv) A number of candidates from my class is appearing for the GATE examination. Which of the above sentences are grammatically CORRECT?
A tank of water has a gate in its vertical wall. The gate is 4 m high and 3 m wide. The top edge of the gate is 2 m below the surface of water. What is the hydrostatic force on the gate. Take specific weight of water as 10 kN/m3.
Dehli Gate, Nagauri Gate, Talaqi Gate and Mori Gate are located in which Fort of Haryana?
Consider the following statements regarding n-channel JFET: 1. The maximum drain current IDSS occurs when gate-to-source voltage VGS = 0 V and drain-to-source voltage VDS ≥ |VP|. (VP is pinch-off voltage). 2. For gate-to-source voltage VGS less than the pinch-off level, the drain current is 0 A. 3. For all levels of VGS between 0 V and the pinch-off level, the current ID will range between IDSS and 0 A, respectively. which of the above statements are correct ?