Related Questions

The majority charge carriers in p-type silicon are
A Free electrons
B ions
C conduction electrons
D holes
At cut-off, the JFET channel is ___________
A at its widest point
B completely closed by the depletion region
C extremely narrow
D reverse baised
The gate voltage in a JFET at which drain current becomes zero is called ___________ voltage
A saturation
B pinch-off
C active
D cut-off
The output characteristics of a JFET closely resemble the output characteristics of a ___________ valve
A pentode
B tetrode
C triode
D diode
A JFET has high input impedance because ___________
A it is made of semiconductor material
B input is reverse biased
C of impurity atoms
D none of the above
A MOSFET differs from a JFET mainly because ___________
A of power rating
B the MOSFET has two gates
C the JFET has a pn junction
D none of the above
If the reverse bias on the gate of a JFET is increased, then width of the conducting channel ___________
A is decreased
B is increased
C remains the same
D none of the above
If the gate of a JFET is made less negative, the width of the conducting channel ___________
A remains the same
B is decreased
C is increased
D none of the above
The input control parameter of a JFET is ___________
A gate voltage
B source voltage
C drain voltage
D gate current
The input impedance of a JFET is ___________ that of an ordinary transistor
A equal to
B less than
C more than
D none of the above

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