In an intrinsic semiconductor, at a given temperature T

A The number of electrons-hole pairs generated per second due to thermal motion are equal to the number of electron-hole pairs lost per second due to recombination
B The number of electron-hole pairs generated per second due to thermal motion is always less than the number of electron-hole pairs lost per second due to recombination
C The number of electron hole pairs generated per second due to thermal motion is always more than the number of electron-hole pairs lost per second due to recombination
D Any of the above

Correct Answer: The number of electrons-hole pairs generated per second due to thermal motion are equal to the number of electron-hole pairs lost per second due to recombination

Bissoy MCQ
#Electronics And Communications Engineering #Materials And Components

Related Questions

At room temperature, an intrinsic semiconductor has ___________
A Many holes only
B A few free electrons and holes
C Many free electrons only
D No holes or free electrons
At absolute temperature, an intrinsic semiconductor has ___________
A A few free electrons
B Many holes
C Many free electrons
D No holes or free electrons
The number of free electrons and holes in intrinsic semiconductor increases when the temperature
A Decreases
B Increases
C Stays the same
D 0oC
E None of the above
At room temperature the current in an intrinsic semiconductor is due to
A Holes
B Electrons
C Ions
D Holes and electrons
At room temperature the number of conducting electrons in an intrinsic semiconductor
A Is almost equal to the number of valence electrons
B Is about half the number of valence electrons
C Is small as compared to the number of valence electrons
D Is a very small fraction of the number of valence electrons
At room temperature an intrinsic semiconductor has
A a few free electrons and holes
B many holes
C many free electrons
D No holes
E None of the above
An intrinsic semiconductor has some holes in it at room temperature. What causes these holes?
A Doping
B Valence electrons
C Free electrons
D Thermal energy
E None of the above
In an intrinsic semiconductor, the number of free electrons
A Equals the number of holes
B Is less than the number of holes
C Is greater than the number of holes
D Impossible to say
E None of the above
The impurity level in an extrinsic semiconductor is about of pure semiconductor.
A 10 atoms for 108 atoms
B 1 atom for 108 atoms
C 1 atom for 104 atoms
D 1 atom for 100 atoms
As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ___________
A Remains the same
B Increases
C Decreases
D None of the above

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