Related Questions

কমন গ্রামিটার বর্তনীতে একটি n-p-n ট্রানজিস্টরের সংগ্রাহকে 8 V ব্যাটারী সংযুক্ত আছে। সংগ্রাহক Rt রোধের দুই প্রান্তে বিভব পতন 0.5 V হলে বেস কারেন্ট নির্ণয় কর। [দেওয়া আছে Rt = 800 Ω এবং বর্তনীর α =0.96)(An n-p-n transistor is connected in common emitter configuration in which the collector supply is 8 V. Determine the base current, if the voltage drops across the resistance Re of the collector circuit is 0.5 V. [Rt = 800Ω and α = 0.96])
A 0.625 mA
B 0.000625 mA
C 0.974 mA
D 0.026 mA
E 0.000026 mA
In a single stage transistor amplifier, RC and RL represent collector resistance and load resistance respectively. The transistor sees a d.c. load of ___________
A RC + RL
B RC || RL
C RL
D RC
The value of collector load RC in a transistor amplifier is ___________ the output impedance of the transistor.
A The same as
B Less than
C More than
D None of the above
For proper operation of the transistor, its collector should have ___________
A Proper forward bias
B Proper reverse bias
C Very small size
D None of the above
A single stage transistor amplifier with collector load RC and emitter resistance RE has a d.c. load of ___________
A RC
B RC || RE
C RC - RE
D RC + RE
In a bipolar transistor, the base collector junction has
A Forward bias
B Reverse bias
C Zero bias
D Zero or forward bias
The collector-base junction in a transistor has ___________
A forward bias at all times
B reverse bias at all times
C low resistance
D none of the above
If RC and RL represent the collector resistance and load resistance respectively in a single stage transistor amplifier, then a.c. load is
A RL + RC
B RC || RL
C RL - RC
D RC
One of the advantages of base modulation over collector modulation of a transistor class C amplifier is
A Improved efficiency
B Better linearity
C High power output per transistor
D The lower modulating power requirement
When the transistor (CE arrangement) is in the cut off region, the collector current is ___________.
A ICBO
B ICEO
C (ß + 1) ICEO
D IC(sat)

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