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For transistor action (a) Base, emitter, and collector regions should have similar size and doping concentrations. (b) The base region must be very thin and lightly doped. (c) The emitter-base junction is forward biased and the base-collector junction is reverse biased. (d) Both the emitter-base junction as well as the base-collector junction are forward biased. Which one of the following pairs of statements is correct?
A transistor is used in common emitter mode as an amplifier. Then a. The base-emitter junction is forward biased b. The base-emitter junction is reverse biased  c. The input signal is connected in series with the voltage applied to the base-emitter junction  d. The input signal is connected in series with the voltage applied to bias the base-collector junction Which of the following statement is true?
Consider the following statements regarding an N-P-N Bipolar Junction Transistor: 1. Emitter diode is forward biased and the collector diode is reverse biased 2. Emitter has many free electrons 3. Free electrons are injected into the base and pass through the collector 4. Depletion layers around junction J1 and J2 of BJT are widened. Which of the above statements are correct?
Assertion (A): A p-n junction diode with low junction depth can be used as a solar cell when illuminated by suitable light (wavelength) at the top thin layer above the junction. Reason (R): A p-n junction diode under no condition can be used as a solar cell. It can be used only as a light-emitting diode for optoelectronic applications.
Which of the following is the correct match based on the application of diodes? (considering general trends) (a) Zener diode -- Reverse biased (b) Photodiode - Forward biased (c) Half wave Rectifier - Both Forward and reversed biased
In a BJT, if the collector-base junction is forward-biased and the base-emitter junction is forward-biased, which region is the BJT operating in?
Which of the following conditions must be satisfied for a transistor to be in saturation? 1. Its collector to base junction should be under forward bias 2. Its collector to base junction should be under reverse bias 3. Its emitter to base junction should be under reverse bias 4. Its emitter to base junction should be under forward bias Which of the above conditions are correct?
Consider the following statements regarding Thyristor: 1. It conducts when forward biased and positive current flows through the gate 2. It conducts when forward biased and negative current flows through the gate 3. It commutates when reverse biased and negative current flows through the gate 4. It commutates when the gate current is withdrawn Which of these statement(s) is/are correct?
In NPN transistor, when emitter junction is forward biased and collector junction is reverse biased, the transistor will operate in
If the emitter-base junction is forward biased and the collector-base junction is reverse biased, what will be the region of operation for a transistor?