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ডায়োড বিমুখী বায়াস(reversed biased) হলে নিঃশেষিত স্তর (depletion layer)-

ডায়োড বিমুখী বায়াস(reversed biased) হলে নিঃশেষিত স্তর (depletion layer)- Correct Answer বৃদ্ধি পাবে

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ডায়োডকে বিমুখী বায়াস করলে নিঃশেষিত স্তর (Depletion Layer) -
Some small cubes of same height 7 cm but variable length and width are put inside a large cuboid of height 21 cm. Length and width of cuboid is 32 cm and 24 cm, respectively. Small cubes are put such that cubes at the bottom most layer is of similar base area; second layer contains all the cubes of similar base area and third layer have all the cubes of similar base area. Which of the following statement(s) given below is / are TRUE? A: If side of each small cubes at bottom most layer is 8 cm, then maximum number of small cubes that can be put at bottom most layer is 12. B: If maximum of 48 cubes can be put at second layer, then side of each cube at second layer is 6 cm. C: If side of each small cubes at third layer is 1.6 cm, then maximum number of small cubes that can be put at third layer is 300.
ডায়োডকে বিমুখী বায়াস করলে নিঃশেষিত স্তরের কী হয়?
পণ্যের জীবনচক্রের স্তর হলো- i. পণ্য উন্নয়ন স্তর ii. পণ্য বিশ্লেষণ স্তর iii. পণ্য প্রবৃদ্ধি স্তর নিচের কোনটি সঠিক?
পূর্ণতরঙ্গ একমুখীকরণ বর্তনী তৈরি করা যায়- ⅰ. ২ টি ডায়োড দিয়ে ii. ৩ টি ডায়োেড দিয়ে iii. ৪ টি ডায়োড দিয়ে নিচের কোনটি সঠিক?
Which of the following is the correct match based on the application of diodes? (considering general trends) (a) Zener diode -- Reverse biased (b) Photodiode - Forward biased (c) Half wave Rectifier - Both Forward and reversed biased
For transistor action (a) Base, emitter, and collector regions should have similar size and doping concentrations. (b) The base region must be very thin and lightly doped. (c) The emitter-base junction is forward biased and the base-collector junction is reverse biased. (d) Both the emitter-base junction as well as the base-collector junction are forward biased. Which one of the following pairs of statements is correct?
Consider the following statements regarding Thyristor: 1. It conducts when forward biased and positive current flows through the gate 2. It conducts when forward biased and negative current flows through the gate 3. It commutates when reverse biased and negative current flows through the gate 4. It commutates when the gate current is withdrawn Which of these statement(s) is/are correct?
Consider the following statements regarding an N-P-N Bipolar Junction Transistor: 1. Emitter diode is forward biased and the collector diode is reverse biased 2. Emitter has many free electrons 3. Free electrons are injected into the base and pass through the collector 4. Depletion layers around junction J1 and J2 of BJT are widened. Which of the above statements are correct?
A diode had a transition capacitance of 1pF and depletion width of 1 µm. The capacitance changes to 10 pF when the depletion width changes. The final depletion width is __________