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Higher Study | Electronic Devices | Carriers in Semiconductors

The flow of electrons caused by variation in concentration is known as
The types of carriers in a semiconductor are
In semiconductors, a donor may be
To obtain n-type semiconductor the impurity added to pure semiconductor is
In a degenerately doped n-type semiconductor, the Fermi level lies in the conduction band when
What kind of semiconductor is formed when phosphorus is added to silicon?
When donor type impurity is added to a semiconductor material
A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the following statements is true for the energy band diagram shown in the following figure?
How many electrons are there in the valence shell of a pure semiconductor?
An N-type semiconductor having uniform doping is biased as shown in the figure. If EC is the lowest energy level of the conduction band, EV is the highest energy level of the valance band and EF is the Fermi level, which one of the following represents the energy band diagram for the biased N-type semiconductor?
Which of the following is referred to as majority carriers in a p-type material?
Which of the following is a semiconductor material?
The energy which any electron possesses at 0 K is:
An n-type of silicon can be formed by adding impurity of: 1. Phosphorous 2. Arsenic 3. Boron 4. Aluminium Which of the above are correct?
By doping Germanium with Gallium, the types of semi-conductors formed are: 1. N-type 2. P-type 3. Intrinsic 4. Extrinsic Which of the above are correct?
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