Storage Elements-2 MCQ

Test your knowledge with important Storage Elements-2 MCQ and their applications. These MCQs are beneficial for competitive exams too. Explore 30 + more Storage Elements-2 MCQs at Bissoy

• Static RAM uses ____________ transistors.
  ক

  four

  খ

  five

  গ

  six

  ঘ

  seven
• Realization of JK flipflop is based on
  ক

  n-pass transistor

  খ

  p-pass transistor

  গ

  CMOS

  ঘ

  BiCMOS
• FOR nMOS which implementation is not suitable?
  ক

  NAND gate

  খ

  NOR gate

  গ

  AND gate

  ঘ

  OR gate
• Which implementation is slower?
  ক

  NAND gate

  খ

  NOR gate

  গ

  AND gate

  ঘ

  OR gate
• In RAM arrays, the transistor is of
  ক

  minimum size

  খ

  maximum size

  গ

  of any size

  ঘ

  size doesn’t play a role
• Which cell is non volatile?
  ক

  one transistor dynamic cell

  খ

  two transistor dymanic cell

  গ

  four transistor dynamic cell

  ঘ

  pseudo static RAM cell
• Cells must be non stackable in RAM storage cell.
  ক

  true

  খ

  false
• Pseudo static RAM cell is built using
  ক

  one inverter

  খ

  two inverters

  গ

  three inverters

  ঘ

  four inverters
• RAM is a _____ cell.
  ক

  dynamic

  খ

  partially dynamic

  গ

  static

  ঘ

  pseudo static
• Reading a cell is a _______ operation.
  ক

  constructive

  খ

  destructive

  গ

  semi constructive

  ঘ

  semi destructive
• Overhead bits are used for sensing.
  ক

  true

  খ

  false