Semiconductor Physics MCQ

Test your knowledge with important Semiconductor Physics MCQ and their applications. These MCQs are beneficial for competitive exams too. Explore 30 + more Semiconductor Physics MCQs at Bissoy

• A particular intrinsic semiconductor has a resistivity of 50 (ohm-cm) at T = 300 K and 5 (ohm-cm) at T = 330 K. If change in mobility with temperature is neglected, the bandgap energy of the semiconductor is
  ক

  1.9 eV

  খ

  1.3 eV

  গ

  2.6 eV

  ঘ

  0.64 eV
• Six volts is applied across a 2 cm long semiconductor bar. The average drift velocity is 104 cms. The electron mobility is
  ক

  4396 cm2/V-s 2

  খ

  3 x 104 cm2/V-s

  গ

  6 x 104 cm2V-s

  ঘ

  3333 cm2/V-s
• A silicon sample doped n type at 10^18 cm3 have a resistance of 10 ohm. The sample has an area of 10^(-6) cm2 and a length of 10 µm . The doping efficiency of the sample is (µn = 800 cm2/V-s )
  ক

  43.2%

  খ

  78.1%

  গ

  96.3%

  ঘ

  54.3%
• In germanium semiconductor at T 300 K, the acceptor concentrations is Na 1013 cm3 and donor concentration is Nd 0. The thermal equilibrium concentration p0 is
  ক

  2.97 x 109 cm3

  খ

  2.68 x 1012 cm3

  গ

  2.95 x 1013 cm3

  ঘ

  2.4 cm3
• The thermal-equilibrium concentration of hole p0 in silicon at T = 300 K is 1015 cm3. The value of n0 is
  ক

  3.8 x 108 cm3

  খ

  4.4 x 104 cm3

  গ

  2.6 x 104 cm3

  ঘ

  4.3 x 108 cm3
• In silicon at T = 300 K if the Fermi energy is 0.22 eV above the valence band energy, the value of p0 is
  ক

  2 x 1015 cm3

  খ

  1015 cm3

  গ

  3 x 1015 cm3

  ঘ

  4 x 1015 cm3
• In silicon at T = 300 K the thermal-equilibrium concentration of electron is n0 = 5 x 10^4 cc. The hole concentration is
  ক

  4.5 x 1015 cc

  খ

  4.5 x 1015 m3

  গ

  0.3 x 10-6 cc

  ঘ

  0.3 x 10-6 m3
• Two semiconductor material have exactly the same properties except that material A has a bandgap of 1.0 eV and material B has a bandgap energy of 1.2 eV. The ratio of intrinsic concentration of material A to that of material B is
  ক

  2016

  খ

  47.5

  গ

  58.23

  ঘ

  1048
• The intrinsic carrier concentration in silicon is to be no greater than ni = 1 x 10^12 cc. The maximum temperature allowed for the silicon is ( Eg = 1.12 eV)
  ক

  300 K

  খ

  360 K

  গ

  382 K

  ঘ

  364 K