Semiconductor MCQ

Test your knowledge with important Semiconductor MCQ and their applications. These MCQs are beneficial for competitive exams too. Explore 30 + more Semiconductor MCQs at Bissoy

• Metal-semiconductor-metal (MSM) photo-detectors are photoconductive detectors.
  ক

  True

  খ

  False
• Waveguide structure provides high quantum efficiency.
  ক

  True

  খ

  False
• What is the main benefit of the waveguide structure over conventional hetero-junction phototransistor?
  ক

  High depletion region

  খ

  Depletion width

  গ

  Increased photocurrent, responsivity

  ঘ

  Low gain
• Waveguide phototransistors utilize a ___________ waveguide layer under the _________ transistor region.
  ক

  Active, passive

  খ

  Passive, active

  গ

  Homo, hetero

  ঘ

  Hetero, homo
• The _____________ at emitter-base junction gives good emitter base injection efficiency.
  ক

  Homo-junction

  খ

  Depletion layer

  গ

  Holes

  ঘ

  Hetero-junction
• The n-p-n hetero-junction phototransistor is grown using ______________
  ক

  Liquid-phase tranquilizers

  খ

  Liquid-phase epistaxis

  গ

  Solid substrate

  ঘ

  Hetero poleax
• Which of the following is the difference between the n-p-n and conventional bipolar transistor?
  ক

  Electric property

  খ

  Magnetic property

  গ

  Unconnected base

  ঘ

  Emitter base efficiency
• The detection mechanism in the ____________ photo-detector includes inter sub-band transitions.
  ক

  Dwell

  খ

  Set

  গ

  Avalanche

  ঘ

  Futile
• For a phototransistor having gain of 116.5, wavelength of 1.28 μm, optical power 123μW. Determine collector current.
  ক

  0.123 mA

  খ

  0.0149 mA

  গ

  1.23 mA

  ঘ

  0.54 mA
• A phototransistor has collector current of 18 mA, incident optical power of 128 μW with a wavelength of 1.24 μm. Determine an optical gain.
  ক

  1.407 *102

  খ

  19.407 *102

  গ

  2.407 *102

  ঘ

  3.407 *102
• Phototransistors based on hetero-junction using _________ material are known as waveguide phototransistors.
  ক

  InGaP

  খ

  InGaAs

  গ

  InGaAsP/ InAlAs

  ঘ

  ErGaAs
• A ________ is created by hetero-junction at collector-base junction.
  ক

  Potential barrier

  খ

  Depletion region

  গ

  Parasitic capacitance

  ঘ

  Inductance
• _______ emitter-base and collector-base junction capacitances is achieved by use of hetero-structure along with _________ base resistance.
  ক

  Low, high

  খ

  High, low

  গ

  Low, low

  ঘ

  High, negligible
• A large secondary current _________________ in n-p-n InGaAs phototransistor is achieved.
  ক

  Between base and collector

  খ

  Between emitter and collector

  গ

  Between base and emitter

  ঘ

  Plasma
• The _____________ is photosensitive to act as light gathering element.
  ক

  Base-emitter junction

  খ

  Base-collector junction

  গ

  Collector-emitter junction

  ঘ

  Base-collector junction and Base-emitter junction